The distribution of field-induced charges in C₆₀ fullerite
The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations f...
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| Date: | 2006 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
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| Series: | Физика низких температур |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120055 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос. |