Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to l...
Збережено в:
| Дата: | 2000 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120226 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion. |
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