Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caus...
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| Date: | 1999 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120245 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ. |