Formation and evolution of intermixing zones in C/Si multilayer under heating

Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer...

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Datum:2014
Hauptverfasser: Zhuravel, I.A., Bugayev, Ye.A., Penkov, A.V., Zubarev, E.N., Sevryukova, V.A., Kondratenko, V.V.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014
Schriftenreihe:Functional Materials
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/120462
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.

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