Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs)
The analytical and numerical calculations of electron and hole spectra renormalised by L- and I-phonons taking into account the configurational interaction are performed for the QD embedded into semiconductor medium exemplified by GaAs/AlxGa₁₋xAs nanoheterosystems. It is established that for the...
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| Datum: | 2001 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2001
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120473 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs) / M.V. Tkach, M.Y. Mikhalyova, O.M. Voitsekhivska, R.B. Fartushinsky // Condensed Matter Physics. — 2001. — Т. 4, № 3(27). — С. 579-589. — Бібліогр.: 16 назв. — англ. |