InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures
Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures are studied. The size distribution of InAs quantum dots (QD's) is found to...
Saved in:
| Date: | 2000 |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120508 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures / W.T. Masselink, H. Kissel, U. Mueller, C. Walther, Yu.I. Mazur, G.G. Tarasov, M.P. Lisitsa, S.R. Lavoric, Z.Ya. Zhuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 121-125. — Бібліогр.: 15 назв. — англ. |