Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit current in the above solar cells (SC) was performed. In particular, the low-en...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120642 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces / N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov, A.V. Sachenko, I.O. Sokolovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 72-78. — Бібліогр.: 7 назв. — англ. |