Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment
We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device life...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Цитувати: | Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ. |
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irk-123456789-1206512017-06-13T03:02:36Z Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment Nazarov, A.N. Skorupa, W. Vovk, Ja.N. Osiyuk, I.N. Tkachenko, A.S. Tyagulskii, I.P. Lysenko, V.S. Gebel, T. Rebohle, L. Yankov, R.A. Nazarova, T.M. We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation. 2005 Article Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 68.35, 78.55 http://dspace.nbuv.gov.ua/handle/123456789/120651 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
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We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation. |
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Article |
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Nazarov, A.N. Skorupa, W. Vovk, Ja.N. Osiyuk, I.N. Tkachenko, A.S. Tyagulskii, I.P. Lysenko, V.S. Gebel, T. Rebohle, L. Yankov, R.A. Nazarova, T.M. |
| spellingShingle |
Nazarov, A.N. Skorupa, W. Vovk, Ja.N. Osiyuk, I.N. Tkachenko, A.S. Tyagulskii, I.P. Lysenko, V.S. Gebel, T. Rebohle, L. Yankov, R.A. Nazarova, T.M. Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nazarov, A.N. Skorupa, W. Vovk, Ja.N. Osiyuk, I.N. Tkachenko, A.S. Tyagulskii, I.P. Lysenko, V.S. Gebel, T. Rebohle, L. Yankov, R.A. Nazarova, T.M. |
| author_sort |
Nazarov, A.N. |
| title |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| title_short |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| title_full |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| title_fullStr |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| title_full_unstemmed |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| title_sort |
modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120651 |
| citation_txt |
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment / A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A. Yankov, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 90-94. — Бібліогр.: 20 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 90-94.
PACS: 68.35, 78.55
Modification of electroluminescence and charge trapping
in germanium implanted metal-oxide silicon light-emitting diodes
with plasma treatment
A.N. Nazarov,2 W. Skorupa,1 Ja.N. Vovk,2 I.N. Osiyuk,2 A.S. Tkachenko,2 I.P. Tyagulskii,2 V.S. Lysenko,2
T. Gebel,3 L. Rebohle,3 R.A. Yankov,3 T.M. Nazarova4
1 Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., POB 510119, D-01314
Dresden, Germany
2 Institute of Semiconductor Physics, NAS of Ukraine, 45, prospekt Nauky, 03028 Kyiv, Ukraine
3 Nanoparc GmbH, 45, Bautzner Landstrasse, D-01454 Dresden, Germany
4 National Technical University “KPI”, 37, prospekt Peremogy, 03056 Kyiv, Ukraine
Abstract. We have studied the effect of plasma treatment on both the
electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon
(MOS) devices and the charge trapping processes occurring therein. Under optimum
conditions of plasma treatment, an appreciable increase in the device lifetime has been
observed while maintaining the intensity of the light emission unchanged in the violet
range of the spectrum. These phenomena are believed to be associated with recovery of
the oxide network resulting from a relief of internal mechanical stresses and bond
rearrangement that leads to a decrease in the generation efficiency of electron traps
which are responsible for the device degradation.
Keywords: electroluminescence, nanoclusters, MOS structure.
Manuscript received 10.12.04; accepted for publication 18.05.05.
1. Introduction
The development of silicon-based light-emitting devices
capable of operating at room temperature (RT) has
recently gained in importance due to the need for
efficient and inexpensive light sources, fabrication of
which is fully compatible with the existing silicon device
technology. One promising version of such a device
consists of MOS structure in which the thermally-grown
SiO2 film is ion-implanted with Ge [1–3] and is then
processed by rapid thermal annealing (RTA) [4, 5]. This
MOS light-emitting device (MOSLED) typically uses a
transparent layer of indium-tin oxide (ITO) on the top of
the SiO2 film, and an Al layer on the back of the Si
substrate as the current injecting electrodes [4]. A
technologically important feature of a Ge ion-implanted
and RTA-treated MOSLED is its ability to emit violet
light (wavelength λ = 390 nm) of an appreciably high
intensity. Such MOSLEDs represent significant
advancement towards combining optical and electronic
processing on the same chip while achieving a maximal
EL efficiency within the limits of the Si material
properties.
Critical issues of the MOSLED performance are the
device durability in terms of device operating lifetime,
which has to be made sufficiently long, and the high-
field injection-associated oxide degradation, which has
to be prevented or at least retarded significantly in order
to permit practical utilization [6-8].
The previous works [9-11] have shown that the
radio-frequency (RF) plasma treatment (PT) of ion-
implanted MOS structures may result in a considerable
modification of their structural and electrical properties.
In the present paper, we demonstrate that the optimized
low-temperature RF treatment of MOSLEDs in
hydrogen containing plasma is an efficient and
straightforward way of improving their performance and
high-field injection behavior. To the best of our
knowledge, the effect of such a plasma treatment on the
EL and charge trapping properties of high-dose Ge-
implanted MOSLEDs has not yet been reported.
2. Experimental
MOSLED structures were fabricated using an n-type
(100) Si wafer on which a 200 nm-thick layer of thermal
SiO2 was first grown. Ge+ ions were subsequently
implanted into the SiO2 layer at the energy of 100 keV
using the dose of 2.4·1016 cm–2 to form a Ge depth
profile with a peak centered in the middle of the oxide.
Following implantation, the SiO2 / Si structure was
given an RTA at 1000 ºC for 6 s in a nitrogen ambient,
taking into account the fact that such an annealing would
change the Ge implant profile insignificantly [7, 8] and
lead to the maximal EL intensity [12]. An Al layer was
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
90
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 90-94.
Fig. 1. EL spectra of Ge-implanted SiO2 before and after
plasma treatment using different power densities.
Fig. 2. Variation of the maximal EL intensity with electric
input power measured at a wavelength of 390 nm prior to and
following PT for electron injection from ITO electrode (a) and
Si substrate (b).
deposited onto the back of the Si substrate, and an ITO
electrode of 80 nm thickness was sputter-deposited onto
the SiO2 layer to form a MOSLED structure.
The plasma treatment was finally performed on the
MOSLED structure so fabricated using an RF
(13.56 MHz) plasma generated in a low pressure,
parallel plate (diode type) reactor, with the ITO
electrode being exposed to the plasma discharge. The
plasma operating gas was a mixture of 90 % nitrogen
and 10 % hydrogen. The plasma generation power
density was in the 0.5 to 1.5 W·cm–2 range. Additional
substrate pre-heating from a heat source independently
of the plasma discharge was used over the temperature
range of 100 to 300 ºC, and elevated temperatures were
then maintained throughout the plasma treatment. The
duration of the plasma treatment was 15 min. Details of
the plasma reactor and the processing parameters used
are published elsewhere [13].
EL was powered using the constant current (CC)
regime with the positive terminal being normally
connected to the ITO electrode. Reversed polarity
powering (i.e. applying a negative voltage to the ITO
electrode) was alternatively employed. EL
measurements were performed as a function of EL
emission wavelength. Additionally, the dependence of
the EL intensity at λ = 390 nm on both the applied
electric power and the time of electron injection was
studied. The values of the voltage VCC applied across the
MOSLED structure during EL measurements were also
recorded.
3. Results and discussion
Fig. 1 is a composite of EL spectra obtained from
MOSLEDs that had been plasma treated at different
plasma power densities. The EL spectra were recorded
after the application of either positive or negative
potential to the ITO electrode. Three features can be
noticed. The EL spectra all show a peak at 390 nm and a
shoulder at about 420 nm. PT at the optimum power
density of 0.7 W·cm–2 results in a slight increase in the
EL intensity and broadening the spectrum compared to
that for the untreated structure. Higher plasma power
densities lead to a rapid decrease in the EL intensity. It is
worth to point out that lower plasma power densities do
not have any discernible effect on the EL spectra (not
shown). Also, it should be noted that the PT itself was
found to cause no changes in the Ge implant profile over
the entire range of temperatures and powers used as
confirmed by the Rutherford backscattering
spectroscopy analysis (not shown).
Fig. 2 shows the EL intensity measured at 390 nm
as a function of electric power applied to the device
using the same two modes of electron injection as above,
and for different plasma power densities. It is evident
that the PT performed at a power density of 0.7 W·cm–2
leads to a considerable increase in the applied electric
power compared to the untreated structure. Increasing
the plasma power density to 1.5 W·cm–2 results in a
reduction of the maximal applied electric power, which
the device can still withstand.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Another important benefit of the plasma treatment is
that it enables one to achieve an appreciable increase in
the total injected electron charge just before the
breakdown or the so-called charge to breakdown QBD.
91
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 90-94.
Fig. 3. EL intensity and constant current voltage as a function
of electron injected charge prior to and following PT. The
current density used was 2·10–4 A⋅cm–2.
Fig. 4. Variation of the negative trapped charge with total
injected charge prior to and following PT. The current density
used was 2·10–5 A⋅cm–2.
This is shown in Fig. 3, where the EL intensity is plotted
as a function of injected electron charge. The increase in
the total injected electron charge results directly in an
improvement of the device lifetime. A frequently used
measure of the EL durability is the time to half-
luminance or when the EL light output drops to 50 % of
the original light output. As can be seen, an untreated
MOSLED shows relatively low durability in terms of
time to half-luminance. In contrast, a plasma treated
MOSLED exhibits substantially improved durability,
which is by a factor of about four greater than that of the
untreated structure. Furthermore, there is an overall
increase in the total EL intensity for the plasma treated
device whereby one and the same intensity is achieved
for injected times (or injected charges) that are longer by
a factor of about 3.5 as compared to the untreated
device. And finally, the values of VCC for the plasma-
treated MOSLEDs also show an increase as compared to
the untreated devices (see Fig. 3).
The mechanism via which a MOSLED operates is
believed to be based upon impact excitation of specific
defect-type luminescent centers by hot electrons moving
in the conduction band of the oxide [4]. More specifical-
ly, the structural defects produced in the oxide network
by the implantation process are of the so-called oxygen-
deficient centers (ODC) type, in one of which (ODC I)
the oxygen atoms of the original ≡Si-O-Si≡ bonding
configuration are removed allowing replacement of the
Si atoms by implanted Ge atoms and formation of Si-Ge
or Ge-Ge bonds [14]. At sufficiently high implant doses,
the formation of nanoscale clusters of excess Ge atoms
occurs. These clusters assist both the injection and the
transport of electrons that in turn are accelerated to
excite EL [5]. By this model, the results shown in Figs 3
and 4 serve to establish that the PT itself works in such a
way as to reduce the amount of those defect complexes
and states that have detrimental effects on the EL
properties of the MOSLEDs while maintaining
unchanged the population of the defect-type centers that
mediate excitation of EL. The increase of VCC during the
electron injection time is associated mainly with the
negative charge trapping in the oxide [7, 8].
An additional evidence of the favorable effect of PT
on the quality of the oxide layer in a MOSLED can be
obtained by calculating the electron trap parameters both
before and after the plasma treatment. As can be seen in
Fig. 3, VCC does not saturate above an injected charge of
1017 e/cm2, which may be attributed to the generation of
new electron traps during high-field electron injection
[15, 16]. In our case, this phenomenon may manifest
itself due to the fact that the oxide has been subjected to
high dose Ge implantation (6 at. %). Fig. 4 shows that,
for injected charge values in excess of 1017 e/cm2, the
plasma treatment using a power density of 0.7 W·cm–2
leads to a decrease in the trapping efficiency of the
newly generated traps (η = dQt / dQinj), where
Qt = COXΔVCC. A computer fitting of the trapped charge
in the oxide versus injected charge assuming the first-
order kinetics up to an injected charge of 1017 e/cm2, and
trap generation for injected charge values above
1017 e/cm2 allows one to calculate the capture cross-
section of the traps capturing the negative charge [17],
and the effective trap generation probability (without
extracting the occupation probability) [15]. For the
particular implant conditions used, it yields the
following capture cross-sections for these traps: σ1 =
= 1.6·10–15 cm–2, σ2 = 1.2·10–16 cm–2, σ3 = 7.8·10–18 cm–2
and η = 4.6·10–7. After PT at a plasma power density of
0.7 W⋅cm–2 and additional 200 ºC heating there is a
measurable reduction in both the cross-sections of the
above-mentioned traps and the effective trap generation
probability, namely σ1 = 1.1·10–15 cm–2, σ2 =
= 8.8·10–17 cm–2, σ3 = 6.5·10–18 cm–2 and η = 3.1·10–7,
which serves as an evidence of the reduced electron
capture in the dielectric. In addition, for the plasma
treated MOSLEDs the voltage necessary to maintain the
same CC is higher than that for the untreated devices
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
92
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 90-94.
(see Fig. 3). This may be explained in terms of the
partial removal of those traps that influence adversely
the process of charge transfer through the oxide. The
observed reduction in the capture cross-sections for the
negative charge traps after plasma processing while
keeping the EL intensity much the same suggests a
different nature of the traps responsible for the light
emission and the attendant oxide degradation. At the
same time, the reduction of the electron capture in the
newly generated traps after PT might lead to an increase
of the device lifetime. All these changes are believed to
be associated with a relief of the internal mechanical
stress in the oxide resulting from structural
rearrangements.
The decrease in the EL intensity with increasing the
plasma power density above 0.7 W⋅cm–2 (see Fig. 2) is
most likely due to the annealing of the respective EL
centers. It should be noted that the relative stability of
the EL center that gives rise to the 420 nm violet
emission compared to the EL center that produces the
380 nm violet emission suggests a larger capture cross-
section of the latter. Indeed, the low-temperature RF
plasma annealing of defects in silicon dioxide has been
explained by the model of recombination enhanced
defect reactions [18, 19] which takes into account
electron and hole injection processes into the oxide
during plasma treatment and energy extraction during
the effective electron-hole recombination at the defects.
The use of light-mass chemically reactive species
such as hydrogen and nitrogen is beneficial in two ways.
First, the light-mass particles present in the plasma will
not erode/etch the surface so aggressively as will do
heavier-mass species like argon. Second, hydrogen is
helpful in saturating the dangling bonds as well as in
passivating and modifying various defect complexes
[20], whereas nitrogen causes partial nitridation of the
oxide surface, thus improving its structural quality. In
effect, these two elements in combination provide
favorable conditions for surface and defect
modifications.
Conclusions
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
This work has demonstrated the beneficial effects of an
optimized plasma treatment on the overall quality of Ge-
implanted MOSLEDs. These effects can be summarized
as follows. First, such a treatment enables one to achieve
an almost four-fold increase in the total injected electron
charge just before breakdown QBD, which in turn results
in an improvement of the device lifetime. Second,
treating MOSLEDs in a plasma discharge containing
chemically reactive species like nitrogen and hydrogen
leads to the appreciable restoration of the oxide matrix.
Third, the plasma treatment causes a reduction in the
capture cross section of some traps that are responsible
for the accumulation of detrimental charges in the oxide,
while maintaining unchanged the number of those defect
complexes that give rise to the violet EL. Ultimately, the
observed improvement of the MOSLEDs’ quality is due
to the partial removal of specific charge traps, defect
passivation, recovery of the oxide network resulting
from a relief of internal mechanical stresses, and bond
rearrangement.
Acknowledgments
This work was supported by the German
Bundesministerium für Bilding und Forschung (BMBF)
under contract N WTR UKR 01/54. The authors are
grateful to Dr. M. Voelskow for the RBS measurements.
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© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
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Conclusions
Acknowledgments
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