Revealing the hopping mechanism of conduction in heavily doped silicon diodes
Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are described well by the Mott law for variable range hop...
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| Datum: | 2005 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120652 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Revealing the hopping mechanism of conduction in heavily doped silicon diodes / V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 41-44. — Бібліогр.: 8 назв. — англ. |