The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors

The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors

Electrophysical properties and microstructure of PTCR ceramics of the system (Ba,Ca,Sr,Y)TiO3 + y%Mn have been investigated. It has been shown that manganese ions increase the potential barrier at grain boundaries and form a high-resistance outer layer in (Ba,Ca,Sr,Y)TiO₃ ceramics. The resistance...

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Bibliographic Details
Date:2003
Main Authors: V'yunov, O.I., Kovalenko, L.L., Belous, A.G.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2003
Series:Condensed Matter Physics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120701
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors / O.I. V'yunov, L.L. Kovalenko, A.G. Belous // Condensed Matter Physics. — 2003. — Т. 6, № 2(34). — С. 213-220. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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