Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been...
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| Date: | 2015 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120727 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. |