Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)

In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been foun...

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Bibliographic Details
Date:2015
Main Author: Kondratenko, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120734
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) / S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 97-100. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine