Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers

Effects of the presence of isolated disordered layers on the exciton scattering by compositional fluctuations in double semiconductor quantum wells have been studied. In the structures containing both ordered and disordered layers, the probability of the scattering depends on the degree of the excit...

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Bibliographic Details
Date:2015
Main Author: Vertsimakha, G.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120738
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 110-114. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine