Rapidly grown KDP crystals
Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. A comparative analysis of KDP characteristics for crystals grown by conventio...
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Date: | 2000 |
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Main Author: | |
Format: | Article |
Language: | English |
Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121084 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Rapidly grown KDP crystals / V.I. Salo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 200-202. — Бібліогр.: 4 назв. — англ. |