Microstructure of the relaxed (001) Si surface
MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) silicon surface were discovered by using the improved calculation scheme for...
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| Date: | 2000 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121091 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Microstructure of the relaxed (001) Si surface / A.E. Kiv, V.N. Soloviev, T.I. Maximova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 157-160. — Бібліогр.: 15 назв. — англ. |