Melt instabilities on semiconductor surfaces induced by laser radiation
Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and...
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| Datum: | 2000 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121141 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. |