Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination
The self-consistent band structure calculation of PbSnS₃ and PbGeS₃ ternary compounds with the mixed cation coordination was performed using the ab initio density functional theory method. It has been found that both compounds are indirect-gap semiconductors. The calculated band-gap widths are Egi =...
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| Datum: | 2015 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121155 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination / M.M. Bletskan, D.I. Bletskan, V.M. Kabatsii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 12-19. — Бібліогр.: 24 назв. — англ. |