Contacts for silicon IMPATT and pick-off diodes
We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and condit...
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| Datum: | 2000 |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121159 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Contacts for silicon IMPATT and pick-off diodes / N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 352-358. — Бібліогр.: 13 назв. — англ. |