Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors
The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns of specimens. An appearance of additional tensoeffect mechanisms after the LTP d...
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| Date: | 2000 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121177 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors / Ye.F. Venger, V.V. Kolomoets, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 291-294. — Бібліогр.: 10 назв. — англ. |