Hot wall growth and properties of lead telluride films doped by germanium and gallium
The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by...
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| Datum: | 2000 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121178 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ. |