Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells
Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon scattering, charged impurities scattering and electron-hole scattering. The Bo...
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| Datum: | 2015 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121200 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 297-301. — Бібліогр.: 14 назв. — англ. |