Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical paramet...
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| Datum: | 2015 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. |
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