Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping le...
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| Datum: | 2002 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121243 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. |