Surface polariton excitation in ZnO films deposited using ALD
The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for the first time. The frequency “windows” with the obtained excited surface phonon...
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| Datum: | 2015 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121268 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Surface polariton excitation in ZnO films deposited using ALD / E.F. Venger, L.Yu. Melnichuk, A.V. Melnichuk, T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 422-427. — Бібліогр.: 15 назв. — англ. |