Effect of mechanical stress on operation of diode temperature sensors
Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide with each other and with one of three main crystallographic directions [100],...
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| Datum: | 2002 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121331 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of mechanical stress on operation of diode temperature sensors / V.L. Borblik, Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 322-327. — Бібліогр.: 16 назв. — англ. |