Simulation of strain fields in GaSb/InAs heteroepitaxial system
Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core,...
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| Date: | 2006 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121427 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ. |