Mass-spectrometric investigations of gas evolution
Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, o...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121441 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mass-spectrometric investigations of gas evolution / Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 4-7. — Бібліогр.: 6 назв. — англ. |