Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the disloca...
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Datum: | 2016 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121516 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ. |