Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the disloca...

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Datum:2016
Hauptverfasser: Parphenyuk, P.V., Evtukh, A.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121516
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / P.V. Parphenyuk, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 1-8. — Бібліогр.: 78 назв. — англ.

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