Analysis of the silicon solar cells efficiency. Type of doping and level optimization
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown th...
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| Datum: | 2016 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121527 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of the silicon solar cells efficiency. Type of doping and level optimization / A.V. Sachenko, V.P. Kostylyov, M.V. Gerasymenko, R.M. Korkishko, M.R. Kulish, M.I. Slipchenko, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 67-74. — Бібліогр.: 14 назв. — англ. |