Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges....

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Datum:2005
Hauptverfasser: Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121562
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ.

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