Microwave irradiation of gallium arsenide
To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the...
Saved in:
| Date: | 2006 |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121588 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ. |