Photoresponse in Ge/Si nanostructures with quantum dots
Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of phot...
Gespeichert in:
| Datum: | 2006 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121590 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ. |