Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of i...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121591 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. |