Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system
p −T− x diagram of Cd-Hg-Te system is analyzed in the framework of the polyassociative solution model. The temperature dependence of the dissociation constant for ternary complexes, which describes the mixing effects, was determined using the low temperature data on phase equilibrium in the system....
Gespeichert in:
| Datum: | 2006 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121611 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system / P.P. Moskvin, V.V. Khodakovsky, L.V. Rashkovets’kyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 12-16. — Бібліогр.: 16 назв. — англ. |