Photoelectric properties of single crystals Ag₃In₅Se₉

Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism...

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Datum:2006
Hauptverfasser: Huseynov, A.H., Mamedov, R.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121614
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.

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