The formation of n-n⁺ transition in the implanted crystal matrix
The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus...
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| Date: | 2004 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2004
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/134811 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ. |