The formation of n-n⁺ transition in the implanted crystal matrix
The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/134811 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus the plane, which corresponds to the border of transition, is shifted to the border of elasticity with the increase of n. |
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