Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air
The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively.
Gespeichert in:
| Datum: | 2004 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
|
| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/134813 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Phase formation in surface layers of GaTe and InTe single crystals during thermal oxidation in air / O.A. Balitskii, V.P. Savchyn, P.V. Savchyn, Ya.M. Fiyala // Functional Materials. — 2005. — Т. 12, № 2. — С. 206-211. — Бібліогр.: 20 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The oxidation processes of indium and gallium monotellurides have been discussed. The oxidation has been established to result in formation of additional phases with higher tellurium content, namely, gallium and indium sesquitellurides, respectively. |
|---|