Investigation of dislocations in Ge single crystals by scanning electron beam
The comparative analysis of the dislocation images obtained by optical and scanning electron microscopy in Ge single crystals has been carried out. The results obtained by both methods agree well with each other. When there is no impurity atmosphere, the etching pit or the image spot on the dislocat...
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| Datum: | 2004 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/134869 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of dislocations in Ge single crystals by scanning electron beam / V. Nadtochy, M. Golodenko, D. Moskal // Functional Materials. — 2004. — Т. 11, № 1. — С. 40-43. — Бібліогр.: 10 назв. — англ. |