Radiation-induced processes and defects in purified CsI crystals
Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defe...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2007
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/136529 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ. |