Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100)
Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 eV range using electrolytic method. The values of physical parameters and param...
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| Date: | 2009 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2009
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/136623 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100) // P.O. Gentsar, O.I. Vlasenko, M.V. Vuichyk, O.V. Stronski // Functional Materials. — 2009. — Т. 16, № 1. — С. 23-28. — Бібліогр.: 9 назв. — англ. |