The influence of point defects on the temperature dependence of quasi-two-dimensional 2H-NbSe₂ resistivity
The processes of point defects forming in quasi-two-dimensional 2H-NbSe₂ crystals were studied experimentally by measuring the temperature-time resistivity dependencies in the temperature range 300-500 K. It is found out that the special property of (selenium vacancies) formation is the dependence o...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/137632 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of point defects on the temperature dependence of quasi-two-dimensional 2H-NbSe₂ resistivity / A.A. Mamalui, T.N. Shelest, N.B. Fatyanova, V.A. Sirenko // Functional Materials. — 2005. — Т. 12, № 3. — С. 521-525. — Бібліогр.: 13 назв. — англ. |