Crystallization process in thin stoichiometric GeSbTe films
The crystallization kinetics of Ge₁Sb₂Тe₄ and Ge₂Sb₂Тe₅ films has been analyzed using results of impedance measurements, in which Bruggerman's effective medium approximation was employed, considering that the amorphous matrix contained inclusions of two different crystalline phases. To vali...
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| Date: | 2005 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2005
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/138877 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Crystallization process in thin stoichiometric GeSbTe films / D. Claudio, B. Laine, O. Licea, E. Morales-Sanchez, E. Prokhorov, G. Trapaga // Functional Materials. — 2005. — Т. 12, № 4. — С. 669-673. — Бібліогр.: 13 назв. — англ. |