Crystallization process in thin stoichiometric GeSbTe films
The crystallization kinetics of Ge₁Sb₂Тe₄ and Ge₂Sb₂Тe₅ films has been analyzed using results of impedance measurements, in which Bruggerman's effective medium approximation was employed, considering that the amorphous matrix contained inclusions of two different crystalline phases. To vali...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/138877 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Crystallization process in thin stoichiometric GeSbTe films / D. Claudio, B. Laine, O. Licea, E. Morales-Sanchez, E. Prokhorov, G. Trapaga // Functional Materials. — 2005. — Т. 12, № 4. — С. 669-673. — Бібліогр.: 13 назв. — англ. |