Some characteristics of semiconductor HgCdMnZnTe solid solution crystals
А novel semiconductor solid solution HgCdMnZnTe containing up to 5 % of manganese and zinc has been studied. Microhardness of these crystals and galvanomagnetic characteristics have been measured out as well as the X-ray structure analysis thereof. The band-gap width, intrinsic charge carrier conce...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2006
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/140079 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Some characteristics of semiconductor HgCdMnZnTe solid solution crystals / N. Popenko, I. Ivanchenko, I. Brovenko, A. Zhigalov, S. Karelin, I. Gorbatyuk, S. Ostapov, S. Dremlyuzhenko, I. Rarenko, R. Zaplitnyi, I. Fodchuk, V.G. Deibuk // Functional Materials. — 2006. — Т. 13, № 2. — С. 249-254. — Бібліогр.: 12 назв. — англ. |