The electronic properties of doped single walled carbon nanotubes and carbon nanotube sensors
We present ab initio calculations on the band structure and density of states of single wall semiconducting carbon nanotubes with high degrees (up to 25%) of B, Si and N substitution. The doping process consists of two phases: different carbon nanotubes (CNTs) for a constant doping rate and differen...
Gespeichert in:
| Datum: | 2014 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2014
|
| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/153474 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The electronic properties of doped single walled carbon nanotubes and carbon nanotube sensors / E. Tetik // Condensed Matter Physics. — 2014. — Т. 17, № 4. — С. 43301: 1–12. — Бібліогр.: 32 назв. — англ. |