Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
In this work, we have theoretically investigated the intermixing effect in highly strained In₀.₃Ga₀.₇As/GaAs QW taking into consideration the composition profile change resulting from in-situ indium surface segregation. To study the impact of the segregation effects on the postgrowth intermixing, on...
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| Datum: | 2015 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2015
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/154203 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well / M. Souaf, M. Baira, H. Maaref, B. Ilahi // Condensed Matter Physics. — 2015. — Т. 18, № 3. — С. 33005: 1–6. — Бібліогр.: 25 назв. — англ. |