Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the...
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| Datum: | 2015 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2015
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/155795 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv // Condensed Matter Physics. — 2015. — Т. 18, № 4. — С. 43801: 1–8. — Бібліогр.: 23 назв. — англ. |