Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rect...
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| Datum: | 2018 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2018
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/157039 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. |