Current transport through ohmic contacts to indiume nitride with high defect density
The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ10¹⁸ and 8.3ċ10¹⁸ cm⁻³) over the wide temperature range (4.2 - 380 K). The growing curves are obtained in the entire investigated temperature range for b...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2018
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| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/157174 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Current transport through ohmic contacts to indiume nitride with high defect density / P.O. Sai, N.V. Safriuk, V.V. Shynkarenko, P.N. Brunkov, V.N. Jmerik, S.V. Ivanov // Functional Materials. — 2018. — Т. 25, № 3. — С. 486-489. — Бібліогр.: 6 назв. — англ. |